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Other articles related with "resistive random access memory"：
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87701 |
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) |
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High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer |
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Chin. Phys. B
2018 Vol.27 (8): 87701-087701
[Abstract]
(781)
[HTML 1 KB]
[PDF 2296 KB]
(195)
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87305 |
Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲) |
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Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers |
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Chin. Phys. B
2017 Vol.26 (8): 87305-087305
[Abstract]
(549)
[HTML 1 KB]
[PDF 671 KB]
(353)
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38501 |
Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令) |
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Graphene resistive random memory–the promising memory device in next generation |
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Chin. Phys. B
2017 Vol.26 (3): 38501-038501
[Abstract]
(956)
[HTML 1 KB]
[PDF 5614 KB]
(1337)
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107302 |
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮) |
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Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer |
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Chin. Phys. B
2016 Vol.25 (10): 107302-107302
[Abstract]
(623)
[HTML 1 KB]
[PDF 1458 KB]
(280)
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106102 |
Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢) |
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Self-compliance multilevel storage characteristic in HfO2-based device |
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Chin. Phys. B
2016 Vol.25 (10): 106102-106102
[Abstract]
(576)
[HTML 1 KB]
[PDF 248 KB]
(247)
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56501 |
Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array |
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Chin. Phys. B
2016 Vol.25 (5): 56501-056501
[Abstract]
(664)
[HTML 1 KB]
[PDF 1729 KB]
(396)
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107705 |
Lu Zeng-Xing (芦增星), Song Xiao (宋骁), Zhao Li-Na (赵丽娜), Li Zhong-Wen (李忠文), Lin Yuan-Bin (林远彬), Zeng Min (曾敏), Zhang Zhang (张璋), Lu Xu-Bing (陆旭兵), Wu Su-Juan (吴素娟), Gao Xing-Sen (高兴森), Yan Zhi-Bo (严志波), Liu Jun-Ming (刘俊明) |
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Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films |
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Chin. Phys. B
2015 Vol.24 (10): 107705-107705
[Abstract]
(521)
[HTML 1 KB]
[PDF 794 KB]
(353)
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73101 |
Dai Yue-Hua (代月花), Chen Zhen (陈真), Jin Bo (金波), Li Ning (李宁), Li Xiao-Feng (李晓风) |
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Optimal migration path of Ag in HfO2: A first-principles study |
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Chin. Phys. B
2015 Vol.24 (7): 73101-073101
[Abstract]
(657)
[HTML 1 KB]
[PDF 1468 KB]
(637)
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
[Abstract]
(593)
[HTML 1 KB]
[PDF 1524 KB]
(817)
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87304 |
Zhang Ting (张婷), Yin Jiang (殷江), Zhao Gao-Feng (赵高峰), Zhang Wei-Feng (张伟风), Xia Yi-Dong (夏奕东), Liu Zhi-Guo (刘治国) |
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Bipolar resistance switching in the fully transparent BaSnO3-based memory device |
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Chin. Phys. B
2014 Vol.23 (8): 87304-087304
[Abstract]
(490)
[HTML 1 KB]
[PDF 2175 KB]
(817)
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37201 |
Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) |
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Analysis of resistive switching behaviors of vanadium oxide thin film |
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Chin. Phys. B
2013 Vol.22 (3): 37201-037201
[Abstract]
(830)
[HTML 0 KB]
[PDF 689 KB]
(1421)
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17305 |
Li Ying-Tao(李颖弢), Long Shi-Bing(龙世兵), Lü Hang-Bing(吕杭炳), Liu Qi(刘琦), Wang Qin(王琴), Wang Yan(王艳), Zhang Sen(张森), Lian Wen-Tai(连文泰), Liu Su(刘肃), and Liu Ming(刘明) |
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Investigation of resistive switching behaviours in WO3-based RRAM devices |
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Chin. Phys. B
2011 Vol.20 (1): 17305-017305
[Abstract]
(1594)
[HTML 1 KB]
[PDF 2008 KB]
(1548)
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